MINERALS AND SYNTHETIC COMPOUNDS, AmXn, IN WHICH X ATOMS ARE
          CLOSE PACKED AND A ATOMS OCCUPY TETRAHEDRAL INTERSTICES
 
.

Zincblende

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tetra

50%

fcc

3-d

4 vertices

A- 4c, X- 4c/fcc

.
  structure .
. .
     The zincblende structure has A atoms occupying fifty percent of the tetrahedral .
interstices in each successive layer of FCC packed X atoms.  This structure is also .
called sphalerite.
  .
Ex. ZnS ( zinc sulfide, zincblende ) - low temperature polymorph   ( Zn - A , S - X ) .
.
Crystal lattice
     In the FCC lattice model the AX4 groups of sulfur atoms that are tetrahedrally
coordinated with zinc atoms residing in their interstitial voids are colored differently
than the tetrahedral or octahedral clusters of sulfur atoms whose voids are
unoccupied (blue).
.      
 

zincblende.gif

 
    Figure 60 -  Zincblende lattice

click image to enlarge

                              structure
   
 
.      
     The lattice model shows that the AX4 coordination groups of atoms are joined
by their vertices only due to the fact that only fifty percent of the tetrahedral voids
of each layer are occupied.
.
Polyhedral framework
.      

linking surfaces

zincblende.gif

 

   Figure 61 -   Zincblende polyhedral
                   framework model
                   ( 50 T,  60 pinges)

4 vertices

 
.      
     The polyhedral framework model clearly shows that 50% of the tetrahedrally
coordinated groups of X atoms are occupied with A atoms.  The structure is built up
by linking all the vertices of these tetrahedra together.  By convention only the
occupied tetrahedra are modeled to highlight the geometry and symmetry of these
AX4 coordinated groups of cations and anions.
.
Cleavage

truncated_tetrahedron.gif

 
     (110) - perfect truncated tetrahedron
      ( 28 T, 42 pinges )
Crystal habit  
     tetrahedral, dodecahedral, twinning on (111)
.  
Isostructural minerals/compounds
AgI, AlAs, AlP, AlSb, BAs, BN, BP, BePo, BeS, BeSe, BeTe, CdPo, CdS, CdSe, CdTe,
CuBr, CuCl, CuF, CuI, GaAs, GaP, Cu2Fe2S4, Cu2FeSnS4, GaSb, HgS, HgSe, HgTe,
InAs, InP, InSb, MnS, MnSe, SiC, ZnPo, ZnSe, ZnTe
.

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